Processing method, method of manufacturing semiconductor device, processing apparatus and non-transitory computer-readable recording medium

A processing apparatus comprising:

• a source gas supplier configured to supply a source gas to a substrate provided with a concave structure on a surface thereof from a side of the substrate;
• a reactive gas supplier configured to supply a reactive gas to a substrate;
• and
• a controller configured to be capable of controlling the source gas supplier and the reactive gas supplier so as to perform:
• forming a film on the substrate by performing a cycle a predetermined number of times, wherein the cycle comprises:
• (a) supplying the source gas to the substrate;
• and
• (b) supplying the reactive gas to the substrate, and
• wherein, in (a), by colliding the source gas with an inner wall of the concave structure, the source gas is decomposed to generate an intermediate substance and the intermediate substance adheres to the inner wall of the concave structure, and
• wherein, in (b), the intermediate substance adhered to the inner wall of the concave structure reacts with the reactive gas.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:

• forming a film on a substrate provided with a concave structure on a surface thereof by performing a cycle a predetermined number of times, wherein the cycle comprises:
• (a) supplying a source gas to the substrate from a side of the substrate;
• and
• (b) supplying a reactive gas to the substrate, and
• wherein, in (a), by colliding the source gas with an inner wall of the concave structure, the source gas is decomposed to generate an intermediate substance and the intermediate substance adheres to the inner wall of the concave structure, and
• wherein, in (b), the intermediate substance adhered to the inner wall of the concave structure reacts with the reactive gas.