Read pass voltage dependent recovery voltage setting between program and program verify
AssigneeSanDisk Technologies LLC
InventorsHan-Ping Chen, Wei Zhao, Henry Chin
Life of this patent
Estimating the term…
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AssigneeSanDisk Technologies LLC
InventorsHan-Ping Chen, Wei Zhao, Henry Chin
Estimating the term…
A memory apparatus and method of operation are provided. The apparatus includes memory cells connected word lines. The memory cells are disposed in strings and configured to retain a threshold voltage. A control means is configured to apply a program voltage to selected ones of the word lines while applying pass voltages to unselected ones of the word lines and ramp down both the selected ones of the plurality of word lines and the unselected ones of the word lines to a recovery voltage at a start of a verify phase of each of a plurality of program loops and apply a targeted word line bias to each of the word lines during the verify phase. The control means is also configured to adjust the recovery voltage based on the targeted word line bias applied to each of the plurality of word lines during the verify phase.
A memory apparatus, comprising:
A controller in communication with a memory apparatus including memory cells each connected to one of a plurality of word lines and disposed in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states, the controller configured to:
A method of operating a memory apparatus including memory cells each connected to one of a plurality of word lines and disposed in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states, the method comprising the steps of:
Dependencies are inferred from the claim text.