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US 2023/0410898 A1Published application
Flash memory device with photon assisted programming
AssigneeRambus Inc.
InventorMark D. KELLAM
Life of this patent
Estimating the term…
Abstract
A flash memory cell of a flash memory device is illuminated with light during programming and/or erasing. The wavelength of the light is selected such that the photons impinging on the flash memory cell have an energy that approaches the barrier height (conduction band offset) of the tunnel insulator. Illuminating the flash memory cell during programming/erase increases the tunneling current through the tunnel insulator by way of the photon assisted tunneling (PAT) effect.
Claims20
A memory device, comprising:
- an array of flash memory cells;
- and,
- a light source to selectively direct light into the array of flash memory cells to enhance programming performance.
A memory device, comprising:
- an array of flash memory cells, the flash memory devices of the array each having at least a first charge holding layer e and a first channel;
- and,
- a light source to illuminate the first charge holding layer and the first channel concurrently with a programming of the flash memory devices.
A method of operating a flash memory device, comprising:
- illuminating a flash memory device array;
- and,
- concurrently with illuminating the flash memory device array, programming at least a portion of the flash memory device array.
Dependencies are inferred from the claim text.