Memory device having merged banks on substrate, and method for operating memory device

A method for operating a memory device, comprising:

• receiving an access request for activation of a target row, wherein the memory device comprises a plurality of row segments arranged along a predetermined direction, and the target row is located in a predetermined row segment of the row segments;
• each of the row segments comprises a plurality of memory cells arranged in rows and columns, and each column of memory cells extends in the predetermined direction;
• determining if each neighboring row segment of the predetermined row segment is inactive, wherein each neighboring row segment of the predetermined row segment is coupled to a sense amplifier circuit enabled in response to activation of the predetermined row segment;
• and
• when it is determined that each neighboring row segment of the predetermined row segment is inactive, activating the target row to perform data access operation on the predetermined row segment.

A method for operating a memory device, comprising:

• disabling a predetermined row segment of the memory device, wherein the memory device comprises a plurality of row segments and a plurality of sense amplifier circuits;
• the row segments and the amplifier circuits are arranged alternately along a predetermined direction;
• each of the row segments comprises a plurality of memory cells arranged in rows and columns, and each column of memory cells extends in the predetermined direction;
• the predetermined row segment is one of the row segments;
• the row segments further comprises a first group of row segments and a second group of row segments located at opposite sides of the predetermined row segment respectively;
• decoding a first row address to activate a first row segment in the first groups of row segments;
• and
• decoding a second row address independent of the first row address to activate a second row segment in the second group of row segments.