Magnetoresistive random access memory (mram) with end of life margin sensor

A magnetoresistive random access memory (MRAM) comprising:

• an MRAM array including a data array and a sensor array, the MRAM array arranged in rows and columns, each row having a corresponding word line and each column having a corresponding bit line and a corresponding source line, wherein an intersection of each row and column has a corresponding MRAM cell, wherein each corresponding MRAM cell includes a select transistor and a Magnetic Tunnel Junction (MTJ), wherein:
• each MRAM cell of the data array is configured to store a data bit, and
• in the sensor array, a first column is connected to a second column to form a sensor column, the sensor column including sensor cells in which each sensor cell is formed by a first MRAM cell in the first column together with a second MRAM cell in the second column along a same word line, wherein only one of a first MTJ of the first MRAM cell or a second MTJ of the second MRAM cell is used as an MTJ of the sensor cell, and drain electrodes of a first select transistor of the first MRAM cell and a second select transistor of the second MRAM cell are electrically connected to each other;
• and
• write circuitry configured to, with each write operation to a set of selected MRAM cells at a corresponding write address in the data array along a corresponding selected word line, provide a write current through each MTJ of the set of selected MRAM cells at the corresponding write address and provide an increased write current through each MTJ of any sensor cell along the corresponding selected word line.