Magnetic memory device

A magnetic memory device comprising:

• a first wiring line which extends in a first direction;
• a plurality of second wiring lines, each of which extends in a second direction intersecting the first direction;
• a plurality of first memory cells, each of which includes a first magnetoresistance effect element capable of setting a high resistance state or a low resistance state in which a resistance is lower than a resistance in the high resistance state, and a first selector connected in series to the first magnetoresistance effect element;
• and
• a first switch which includes a first terminal and a second terminal,
• wherein
• a respective one of the plurality of first memory cells is connected between the first wiring line and a respective one of the plurality of second wiring lines,
• the magnetic memory device is configured to apply in operation a first voltage to the second wiring line connected to a selected first memory cell of the plurality of first memory cells, and a second voltage is applied to the second wiring line connected to a non-selected first memory cell of the plurality of first memory cells,
• the first terminal of the first switch is connected to the first wiring line, and
• the magnetic memory device is configured to apply in operation a third voltage different from the first voltage and the second voltage to the second terminal of the first switch.