Mram cell with pair of magnetic tunnel junctions having opposite states and memory device using the same

A memory device using a magnetoresistive random access memory (MRAM) cell, the memory device comprising:

• a plurality of MRAM cells 100 disposed in an m×n matrix;
• a word line driver configured to generate m word line voltages for determination of operation modes of corresponding ones of the MRAM cells;
• and
• a control voltage generator configured to generate a control voltage for control of an operation of each of the MRAM cells and determination of data to be stored in each of the MRAM cells, the control voltage comprising n bit line voltages and n bit line bar voltages,
• wherein each of the MRAM cells comprises:
• a switch unit configured to determine opening and closing thereof by a corresponding one of the word line voltages and to activate a current path between a bit line and a bit line bar in an opened state thereof;
• a storage node comprising first and second magnetic tunnel junctions (MTJs) having opposite states, respectively, the first and second MTJs being connected in series between the bit line and the bit line bar;
• and
• a sensing line configured to be activated in a reading mode of the MRAM cell, thereby creating data reading information based on a voltage between the first and second MTJs.