Spin Torque Oscillator with Enhanced Spin Polarizer

A magnetic recording head, comprising:

• a main pole;
• a spintronic device disposed on the main pole, the spintronic device comprising:
• a spin torque layer;
• a spacer layer disposed on the spin torque layer;
• a multilayer spacer layer disposed over the spin torque layer, the multilayer spacer layer comprising a Cu layer and a spin transparent texture layer;
• and
• a field generation layer disposed on the spacer layer, the field generation layer being disposed in contact with the multilayer spacer layer;
• and
• a trailing shield disposed on the spintronic device, the trailing shield comprising a multilayer notch disposed on the multilayer spacer layer, the multilayer notch comprising a CoFe layer and a Heusler alloy layer, wherein the Cu layer is disposed on the field generation layer, wherein the spin transparent texture layer is disposed on the Cu layer, and wherein the Heusler alloy layer is disposed on the CoFe layer.

A magnetic recording head, comprising:

• a main pole;
• a spintronic device disposed on the main pole, the spintronic device comprising:
• a spin torque layer;
• a Cu layer disposed over the spin torque layer;
• and
• a spin transparent texture layer disposed on the Cu layer, the spin transparent texture layer comprising AgSn or AgZn;
• and
• a trailing shield disposed on the spintronic device, the trailing shield comprising:
• a CoFe layer disposed over the spin transparent texture layer;
• and
• a Heusler alloy layer disposed on the CoFe layer, the Heusler alloy layer comprising CoMnGe, CoFeGe, or CoFeMnGe, wherein the Cu layer has a greater thickness than the Heusler alloy layer, the Heusler alloy layer has a greater thickness than the CoFe layer, and the CoFe layer has a greater thickness than the spin transparent texture layer.

A magnetic recording head, comprising:

• a main pole;
• a spintronic device disposed on the main pole, the spintronic device comprising:
• a seed layer disposed on the main pole;
• a spin torque layer disposed on the seed layer;
• and
• a first multilayer spacer layer disposed over the spin torque layer, the multilayer spacer layer comprising a Cu layer disposed over the spin torque layer and a spin transparent texture layer disposed on the Cu layer, the spin transparent texture layer comprising AgSn or AgZn, wherein the Cu layer has a greater thickness than the spin transparent texture layer;
• and
• a trailing shield disposed on the spintronic device, the trailing shield comprising:
• a multilayer notch disposed over the first multilayer spacer layer, the multilayer notch comprising a CoFe layer and a Heusler alloy layer disposed on the CoFe layer, the Heusler alloy layer comprising CoMnGe, CoFeGe, or CoFeMnGe, wherein the Heusler alloy layer has a greater thickness than the CoFe layer.