Semiconductor structure body and method for manufacturing semiconductor structure body

A method for manufacturing a semiconductor structure body,

• the method being a method in which a stacked body in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked and a plurality of through holes penetrating the conductive layers and the insulating layers in a stacking direction are provided is formed in stages for a plurality of stories each including a predetermined number of conductive layers and a predetermined number of insulating layers,
• the method comprising:
• using a first mask to form a first level difference in a region corresponding to a first pair of coordinates in a planar coordinate system intersecting the stacking direction on a surface of an N-th story;
• forming an (N+1)-th story on the N-th story and propagating the first level difference formed on the N-th story to a surface of the (N+1)-th story to form an alignment mark or a deviation measurement mark in a region corresponding to the first pair of coordinates of the (N+1)-th story;
• using a second mask to form a second level difference in a region corresponding to a second pair of coordinates different from the first pair of coordinates on the surface of the (N+1)-th story;
• forming an (N+2)-th story on the (N+1)-th story and propagating the second level difference formed on the (N+1)-th story to a surface of the (N+2)-th story to form an alignment mark or a deviation measurement mark in a region corresponding to the second pair of coordinates of the (N+2)-th story;
• using the first mask to form the first level difference in a region corresponding to the first pair of coordinates on the surface of the (N+2)-th story;
• and
• forming an (N+3)-th story on the (N+2)-th story and propagating the first level difference formed on the (N+2)-th story to a surface of the (N+3)-th story to form an alignment mark or a deviation measurement mark in a region corresponding to the first pair of coordinates of the (N+3)-th story,
• wherein the first level difference formed on the N-th story propagates to the surface of the (N+1)-th story and does not propagate to the surface of the (N+2)-th story.

A method for manufacturing a semiconductor structure body, the method being a method in which a stacked body in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked and a plurality of through holes penetrating the conductive layers and the insulating layers in a stacking direction are provided is formed in stages for a plurality of stories each including a predetermined number of conductive layers and a predetermined number of insulating layers, the method comprising:

• using a first mask to form a first level difference in a region corresponding to a first pair of coordinates in a planar coordinate system intersecting the stacking direction on a surface of an N-th story;
• forming an (N+1)-th story on the N-th story and propagating the first level difference formed on the N-th story to a surface of the (N+1)-th story to form an alignment mark or a deviation measurement mark in a region corresponding to the first pair of coordinates of the (N+1)-th story;
• using a second mask to form a second level difference in a region corresponding to a second pair of coordinates different from the first pair of coordinates on the surface of the (N+1)-th story;
• forming an (N+2)-th story on the (N+1)-th story and propagating the second level difference formed on the (N+1)-th story to a surface of the (N+2)-th story to form an alignment mark or a deviation measurement mark in a region corresponding to the second pair of coordinates of the (N+2)-th story;
• using a third mask to form a third level difference in a region corresponding to a third pair of coordinates different from the first pair of coordinates or the second pair of coordinates on the surface of the (N+2)-th story;
• forming an (N+3)-th story on the (N+2)-th story and propagating the third level difference formed on the (N+2)-th story to a surface of the (N+3)-th story to form an alignment mark or a deviation measurement mark in a region corresponding to the third pair of coordinates of the (N+3)-th story;
• using the first mask to form the first level difference in a region corresponding to the first pair of coordinates on the surface of the (N+3)-th story;
• and
• forming an (N+4)-th story on the (N+3)-th story and propagating the first level difference formed on the (N+3)-th story to a surface of the (N+4)-th story to form an alignment mark or a deviation measurement mark in a region corresponding to the first pair of coordinates of the (N+4)-th story,
• wherein the first level difference formed on the N-th story propagates to the surface of the (N+1)-th story and does not propagate to the surface of the (N+4)-th story.