Pattern forming method, semiconductor device manufacturing method, and template

A semiconductor device manufacturing method comprising:

• placing an imprint resist material on a film to be processed;
• pressing a template including a plurality of patterns protruding from a reference plane against the imprint resist material to form a first patterned film including first and second patterns separated from each other in a first direction and a third pattern between the first and second patterns;
• forming a photoresist film covering the first patterned film;
• selectively exposing the photoresist film and the developing the photoresist film to expose the first and second patterns;
• processing the film to be processed via the first patterned film and developed photoresist film to form first and second recess portions in which the first and second patterns are transferred to the film to be processed;
• and
• forming a metal layer on the first and second recess portions.

A template for imprint lithography, the template comprising:

• a reference plane surface;
• a first pattern with portions that protrude from the reference plane to different distances;
• a first dummy pattern with a single portion that protrudes from the reference plane surface to a first distance, the first dummy pattern on a first side of the first pattern in a first direction along the reference plane;
• and
• a second dummy pattern with a single portion that protrudes from the reference plane surface to the first distance, the second dummy pattern on a second side of the first pattern in the first direction opposite from the first dummy pattern.