Tool mismatch reduction using aberration map of the tools

A method of tool matching, comprising:

• determining aberration maps of two or more optical systems of two or more scanner tools;
• adjusting two or more Zernike coefficients of the two or more optical systems, based on the determined aberration maps of the two or more optical systems, to minimize critical dimension (CD) variations between the two or more scanner tools;
• first generating a first photoresist pattern by projecting a first layout pattern on a respective substrate by an optical system of each one of the two or more scanner tools;
• second generating a second photoresist pattern by projecting a second layout pattern on the respective substrate by the optical system of each one of the two or more scanner tools;
• determining if the CD variations in a first region of the first photoresist patterns and in a second region of the second photoresist patterns of the respective substrates is within a threshold value;
• and
• repeating the adjusting, the first generating, the second generating, and the determining if the CD variations are not within the threshold value in the first region and in the second region.

A system, comprising:

• two or more scanner tools, wherein each scanner tool comprises an optical system, and
• wherein each optical system comprises:
• two or more mirrors;
• a controller;
• an image detector;
• an analyzer module;
• and
• an actuator coupled to the two or more mirrors;
• wherein in each one of the optical systems, the analyzer module is configured to receive an aberration map of a respective optical system—from the image detector and to send the aberration map of the respective optical system—to the controller;
• and
• wherein in each one of the optical systems, the controller is configured to receive aberration maps of other optical systems, and wherein the controller is also configured to adjust one or more Zernike coefficients of the respective optical system and to adjust one or more Zernike coefficients of the other optical systems, based on the aberration maps of the respective optical system and the other optical systems, to minimize critical dimension (CD) variations when the two or more scanner tools are used for photo lithography using an extreme ultraviolet (EUV) radiation beam to project a layout pattern onto a substrate.