Semiconductor devices with embedded silicon lens
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng-Wei Kuo, Wen-Shiang Liao
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Abstract
A semiconductor device includes a silicon substrate having a first region and a second region. The semiconductor device includes a silicon lens formed in the first region and along a surface of the silicon substrate on a first side of the silicon substrate. The semiconductor device includes a photonic die disposed in the first region and on a second side of the silicon substrate, the second side being opposite to the first side. The semiconductor device includes a waveguide disposed on the second side of the silicon substrate and having a grating coupler.
Claims20
A semiconductor device, comprising:
- a silicon substrate having a first region and a second region;
- a silicon lens formed in the first region and along a surface of the silicon substrate on a first side of the silicon substrate;
- a photonic die disposed in the first region and on a second side of the silicon substrate, the second side being opposite to the first side;
- and
- a waveguide disposed on the second side of the silicon substrate and having a grating coupler.
A semiconductor package, comprising:
- a substrate disposed over a package substrate;
- a grating coupler disposed over the substrate;
- a plurality of first conductive features disposed over the grating coupler;
- an electronic die disposed over the plurality of first conductive features and including a plurality of second conductive features;
- and
- a silicon lens embedded along a first surface of a silicon substrate, wherein the electronic die is formed along a second surface of the silicon substrate opposite to the first surface.
A method for fabricating a semiconductor device, comprising:
- attaching a waveguide having a grating coupler to a first side of a silicon substrate;
- and
- forming a silicon lens on a second, opposite side of the silicon substrate through at least one of:
- (a) forming a first mask over the first side of the silicon substrate;
- (b) etching the silicon substrate using the first mask;
- (c) forming a second mask adjacent the first mask;
- (d) etching the silicon substrate using the first and second masks;
- (e) repeating the steps (c) and (d) to form a staircase profile;
- and (f) rounding the staircase profile.
Dependencies are inferred from the claim text.