Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same

Abstract

An apparatus may include a sensor chip fabricated on a semiconductor wafer, the sensor chip may include a graphene channel patterned in a graphene layer disposed on a dielectric substrate. The sensor chip may include a first electrode formed in electrode material so as to form one or more of an edge side contact or a top side contact in electrical contact with a first end of the graphene channel. The sensor chip may include a second electrode formed in electrode material so as to form one or more of an edge side contact or a top-side contact in electrical contact with a second end of the graphene channel. The sensor chip may include an insulation layer that is layered above at least of portion of the graphene layer and is selected from an inorganic oxide layer and an organic layer.

Dependencies are inferred from the claim text.