Semiconductor structure having biosensor and manufacturing method thereof

A semiconductor structure, comprising:

• a semiconductor substrate comprising a first region and a second region insulated from the first region, and the first region comprising a recess;
• a sensor in the semiconductor substrate and comprising:
• a bio-sensing device disposed on the first region of the semiconductor substrate, the bio-sensing device comprising a first field effect transistor (FET) and a first sensing portion of a sensing film capacitively coupled to the first FET, the first sensing portion conformally covering the recess on the first region;
• at least one voltage-reference device disposed on the second region of the semiconductor substrate, the at least one voltage-reference device comprising a second FET and a second sensing portion of the sensing film capacitively coupled to the second FET;
• a patterned dielectric layer comprising at least one sensing well corresponding to the at least one voltage-reference device and the bio-sensing device;
• and
• a cover comprising fluid channels communicating with the at least one sensing wells.

A manufacturing method of a semiconductor structure, comprising:

• forming a first field effect transistor (FET) and a second FET on a first region and a second region of a semiconductor substrate, respectively;
• forming a recess on the first region of the semiconductor substrate;
• forming a sensing film on the first region and the second region of the semiconductor substrate, wherein a first sensing portion of the sensing film conformally covers the recess on the first region and is capacitively coupled to the first FET, and a second sensing portion of the sensing film is formed on the second region and capacitively coupled to the second FET;
• forming a patterned dielectric layer with at least one sensing well on the sensing film, wherein the at least one sensing well corresponds to the first sensing portion and the second sensing portion of the sensing film;
• and
• disposing a cover on the patterned dielectric layer, wherein the cover comprises fluid channels communicating with the at least one sensing wells.