Group iii nitride single crystal substrate
AssigneeTokuyama Corporation
InventorsMasayuki FUKUDA, Toru NAGASHIMA
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Abstract
A group III nitride single crystal substrate including a main surface, the main surface including: a center; a periphery; an outer region whose distance from the center is greater than 30% of a first distance, the first distance being a distance from the center to the periphery; and an inner region whose distance from the center is no more than 30% of the first distance, wherein a ratio (vA−vB)/vB is within the range of ±0.1%, wherein vA is a minimum value of peak wave numbers of micro-Raman spectra in the inner region; and vB is an average value of peak wave numbers of micro-Raman spectra in the outer region.
Claims5
A method for producing an aluminum nitride single crystal substrate, the method comprising, in the sequence set forth:
- (a) thermally treating a base substrate at a constant temperature of 1000 to 2300° C. for at least 60 seconds, wherein the base substrate is an aluminum nitride single crystal substrate comprising a main surface;
- and
- (b) growing an aluminum nitride single crystal layer over the main surface by means of vapor phase epitaxy, wherein the main surface has a surface roughness of no more than 0.5 nm in terms of arithmetical mean height Sa.
Dependencies are inferred from the claim text.