Selective deposition of material comprising noble metal
AssigneeASM IP Holding B.V.
InventorsMikko RITALA, Chao ZHANG, Eva TOIS
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AssigneeASM IP Holding B.V.
InventorsMikko RITALA, Chao ZHANG, Eva TOIS
Estimating the term…
The current disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. In the disclosure, a material comprising noble metal is selectively deposited on a substrate by a cyclic deposition process. The deposition method comprises providing a substrate in a reaction chamber, wherein the substrate comprises a first surface comprising a first material, and a second surface comprising a second material. A noble metal precursor comprising a noble metal β-diketonate compound is provided in the reaction chamber in vapor phase and a reactant is provided in the reaction chamber in vapor phase to deposit a material comprising noble metal on the first surface relative to the second surface.
A method of selectively depositing material comprising noble metal on a substrate by a cyclic deposition process, the method comprising:
A vapor deposition assembly for depositing a noble material comprising noble metal on a substrate, the vapor deposition assembly comprising:
Dependencies are inferred from the claim text.