Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsHiroki HATTA, Takeo HANASHIMA, Koei KURIBAYASHI, Shin SONE
Life of this patent
Estimating the term…
Loading patent…
AssigneeKokusai Electric Corporation
InventorsHiroki HATTA, Takeo HANASHIMA, Koei KURIBAYASHI, Shin SONE
Estimating the term…
There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.
A method of processing a substrate, comprising:
A method of manufacturing a semiconductor device, comprising:
Dependencies are inferred from the claim text.