Semiconductor memory device
AssigneeKioxia Corporation
InventorsRyouji MASUDA, Hiroki TOKUHIRA
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device includes: a first wiring extending in a first direction; a second wiring extending in a second direction that intersects with the first direction; a resistance change film provided between the first wiring and the second wiring and including at least one element selected from a group consisting of germanium, antimony, and tellurium; an electrode provided between the resistance change film and the first wiring; and a first film selectively provided between the electrode and the first wiring, in which the electrode includes a surface in contact with both of the first wiring and the first film.
Claims13
A semiconductor memory device comprising:
- a first wiring extending in a first direction;
- a second wiring extending in a second direction, the second direction intersecting with the first direction;
- a resistance change film disposed between the first wiring and the second wiring and including at least one element selected from the group consisting of germanium, antimony, and tellurium;
- an electrode disposed between the resistance change film and the first wiring;
- and
- a first film selectively disposed between the electrode and the first wiring, wherein
- the electrode including a surface in contact with both of the first wiring and the first film.
A semiconductor memory device comprising:
- a first wiring extending in a first direction;
- a second wiring extending in a second direction, the second direction intersecting with the first direction;
- a first electrode, a second electrode, and a third electrode disposed between the first wiring and the second wiring and facing each other in a third direction, the third direction intersects with the first direction and the second direction;
- a selector layer disposed between the first electrode and the second electrode;
- a resistance change film disposed between the second electrode and the third electrode;
- and
- an insulating film disposed between the third electrode and the first wiring, wherein
- the third electrode includes a surface in contact with both of the first wiring and the insulating film.
Dependencies are inferred from the claim text.