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US 2023/0403949 A1Published application
Hall effect devices integrated with junction transistors
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsXINFU LIU, WENSHENG DENG, JASON KIN WEI WONG, QIANQIAN MENG
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Abstract
The disclosed subject matter relates generally to semiconductor devices. More particularly, the present disclosure relates to Hall effect devices integrated with junction transistors to achieve tunable parameters within the Hall effect devices. The present disclosure also relates to methods of forming the Hall effect devices.
Claims20
A Hall effect device comprising:
- a well region in a substrate, the well region has a first conductivity type;
- a channel region in the substrate, the channel region is over and in direct contact with the well region, the channel region has a second conductivity type, the second conductivity type is of an opposite conductivity type to the first conductivity type;
- a Hall active region in the substrate, the Hall active region is over and in direct contact with the channel region, the Hall active region has the same conductivity type as the well region, wherein the channel region is between the well region and the Hall active region;
- a first contact region in the Hall active region;
- a second contact region in the Hall active region;
- a supply contact region in the channel region;
- a sensing contact region in the channel region;
- and
- a control contact region in the well region.
6 more elements
A Hall effect device comprising:
- a well region in a substrate, the well region has a first conductivity type;
- a channel region in the substrate, the channel region is over and in direct contact with the well region, the channel region has a second conductivity type, the second conductivity type is of an opposite conductivity type to the first conductivity type;
- a Hall active region in the substrate, the Hall active region is over and in direct contact with the channel region, the Hall active region has the same conductivity type as the well region, wherein the channel region is between the well region and the Hall active region;
- a first contact region in the Hall active region;
- a second contact region in the Hall active region;
- a supply contact region in the channel region;
- a sensing contact region in the channel region;
- a control contact region in the well region;
- and
- a third contact region in the Hall active region, the third contact region is laterally between the first contact region and the second contact region, and the third contact region is connected to the control contact region.
7 more elements
Dependencies are inferred from the claim text.