Damascene mram device

A semiconductor device comprising:

• a magnetic tunnel junction (MTJ) stack, wherein
• a vertical side surface of the MTJ stack comprises a saw tooth edge,
• the MTJ stack comprises vertically aligned layers of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode, wherein
• the free layer of the MTJ stack has a tapered edge comprising a first width at an upper portion of the free layer and a second width at a lower portion of the free layer,
• wherein the first width is greater than the second width.

A method comprising:

• forming a first bottom electrode of a first magnetic tunnel function (MTJ) stack;
• forming a second bottom electrode of a second magnetic tunnel function (MTJ) stack;
• forming a first inter-layer dielectric between the first bottom electrode and the second bottom electrode;
• forming a first reference layer of the first magnetic tunnel function (MTJ) stack;
• forming a second reference layer of the second magnetic tunnel function (MTJ) stack;
• and
• forming a second inter-layer dielectric between the first reference layer and the second reference layer.