Semiconductor memory device and method of fabricating the same

A semiconductor memory device, comprising:

• a substrate having a plurality of active areas and an isolating region;
• a resistor structure, from bottom to top of the resistor structure sequentially comprising:
• a first semiconductor layer;
• and
• a first capping layer;
• and
• a bit line structure, disposed on the substrate to intersect the active areas and the isolating region, from bottom to top of the bit line structure sequentially comprising:
• a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer comprise coplanar top surface and a same semiconductor material;
• a first conductive layer;
• and
• a second capping layer.

A fabricating method of a semiconductor memory device, comprising:

• providing a substrate having a plurality of active areas and an isolating region;
• forming a resistor structure on the isolating region, the resistor structure comprising:
• a first semiconductor layer;
• a first capping layer, disposed on the first semiconductor layer;
• and
• a first spacer, formed on sidewalls of the first semiconductor layer and the first capping layer;
• and
• forming a bit line structure on the substrate to intersect the active areas and the isolating region, and the bit line structure comprising:
• a second semiconductor layer;
• a first barrier layer, disposed on the second semiconductor layer;
• a first conductive layer, disposed on the first barrier layer;
• a second capping layer, disposed on the first conductive layer;
• and
• a second spacer, formed on sidewalls of the second semiconductor layer, the first barrier layer, the first conductive layer, and the second capping layer.