High density metal layers in electrode stacks for transition metal oxide dielectric capacitors

A capacitor, comprising

• a first electrode;
• a second electrode;
• and
• a dielectric layer between the first and second electrodes, wherein the dielectric layer comprises a transition metal and oxygen, the first electrode comprises a first layer on the dielectric layer and a second layer on the first layer, and the second electrode comprises a third layer on the dielectric layer and a fourth layer on the third layer, the first layer comprising a noble metal and oxygen, the third layer comprising oxygen and the noble metal or a second noble metal, the second layer comprising a metal having a density of not less than 16 g/cc, and the fourth layer comprising the metal or a second metal having a density of not less than 16 g/cc.

A system comprising:

• a power supply;
• an integrated circuit die over a package substrate and coupled to the power supply;
• and
• a capacitor in one of the integrated circuit die or the package substrate, the capacitor comprising a dielectric layer comprising a transition metal and oxygen between first and second electrodes, wherein the first electrode comprises a first layer on the dielectric layer and a second layer on the first layer, the first layer comprising a noble metal and oxygen, and the second layer comprising tungsten.