Reduced cross-talk in color and infrared image sensor

An integrated chip, comprising:

• a substrate comprising a front-side surface opposite a back-side surface;
• a plurality of pixel devices disposed on the front-side surface of the substrate;
• an interconnect structure disposed along the front-side surface of the substrate, wherein the interconnect structure comprises a plurality of conductive wires and a plurality of conductive vias disposed within an interconnect dielectric structure and electrically coupled to the plurality of pixel devices;
• a plurality of pixel sensors disposed within the substrate, wherein the plurality of pixel sensors respectively comprise a first image sensor element and a second image sensor element, wherein the first image sensor element is configured to generate electrical signals from infrared (IR) radiation and the second image sensor element is configured to generate electrical signals from visible light;
• and
• a plurality of absorption structures disposed within the interconnect dielectric structure and below the plurality of pixel sensors, wherein the first image sensor elements are respectively laterally spaced between opposing sidewalls of a corresponding absorption structure, and wherein the second image sensor elements are laterally offset from the plurality of absorption structures by a non-zero distance.

An integrated chip, comprising:

• a plurality of pixel sensors disposed within a substrate, wherein the plurality of pixel sensors respectively comprise a first image sensor element adjacent to a second image sensor element, wherein the first image sensor element of the pixel sensors meet at a center of the plurality of pixel sensors, wherein the plurality of pixel sensors comprises a first pixel sensor adjacent to a second pixel sensor;
• a first absorption structure directly underlying the first image sensor element of the first pixel sensor;
• and
• a second absorption structure directly underlying the second image sensor element of the second pixel sensor, wherein the first absorption structure directly contacts the second absorption structure.