Electro-static protection structure, silicon controlled rectifier and semiconductor memory
AssigneeChangxin Memory Technologies, Inc.
InventorQian XU
Life of this patent
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Abstract
An electro-static protection structure includes a substrate, a transistor formed in the substrate, and a capacitor. A first pole of the transistor is connected with an electro-static terminal, and a second pole of the transistor and a gate electrode of the transistor are connected with a discharge terminal. A first pole of the capacitor is connected with the substrate, and a second pole of the capacitor is connected with the electro-static terminal.
Claims20
An electro-static protection structure, comprising:
- a substrate;
- a transistor formed in the substrate, a first pole of the transistor being connected with an electro-static terminal, and a second pole of the transistor and a gate electrode of the transistor being both connected with a discharge terminal;
- and
- a capacitor, a first pole of the capacitor being connected with the substrate, and a second pole of the capacitor being connected with the electro-static terminal.
A Silicon Controlled Rectifier (SCR), comprising an electro-static protection structure, wherein the electro-static protection structure comprises:
- a substrate;
- a transistor formed in the substrate, a first pole of the transistor being connected with an electro-static terminal, and a second pole of the transistor and a gate electrode of the transistor being both connected with a discharge terminal;
- and
- a capacitor, a first pole of the capacitor being connected with the substrate, and a second pole of the capacitor being connected with the electro-static terminal.
A semiconductor memory, comprising an electro-static protection structure, wherein the electro-static protection structure comprises:
- a substrate;
- a transistor formed in the substrate, a first pole of the transistor being connected with an electro-static terminal, and a second pole of the transistor and a gate electrode of the transistor being both connected with a discharge terminal;
- and
- a capacitor, a first pole of the capacitor being connected with the substrate, and a second pole of the capacitor being connected with the electro-static terminal.
Dependencies are inferred from the claim text.