Semiconductor device including structure connecting frontside and backside metal and method of manufacturing the same

A semiconductor device, comprising:

• a substrate having a first surface and a second surface opposite the first surface;
• an isolation layer disposed under the second surface of the substrate and having a first surface;
• a first interconnection structure having a first end exposed by the first surface of the substrate and a second end exposed by the first surface of the isolation layer;
• a first conductive structure disposed on the first surface of the substrate;
• and
• a second conductive structure disposed under the first surface of the isolation layer, wherein
• the first conductive structure and the second conductive structure are electrically connected by the first interconnection structure and configured to receive a first signal.

A method of manufacturing a semiconductor device, comprising:

• providing a substrate including electronic devices embedded therein, wherein the substrate having a first surface and a second surface opposite the first surface;
• forming an isolation layer under the second surface of the substrate;
• forming a first interconnection structure extending from the first surface of the substrate into the isolation layer;
• forming two levels of conductive structures on the first surface of the substrate;
• removing a portion of the isolation layer;
• and
• forming a level of conductive structures under a first surface of the isolation layer.