Semiconductor Package and Method

A semiconductor package comprising:

• a first redistribution structure comprising one or more insulating layers and one or more conductive lines in the one or more insulating layers;
• a package component bonded to the first redistribution structure, the package component comprising a semiconductor die;
• an encapsulant on the first redistribution structure, wherein the encapsulant extends laterally from an edge of the first redistribution structure to the package component;
• and
• a heat dissipation structure on a top surface of the package component, the heat dissipation structure comprising:
• a heat transfer layer in direct contact with the top surface of the package component;
• a first heat transfer column on the heat transfer layer, wherein the first heat transfer column comprises a first portion and a second portion, wherein the second portion is bonded to the first portion by solder;
• a first lid on the first heat transfer column, wherein the first lid comprises a first opening and a second opening;
• and
• a second lid on the first lid, wherein the second lid comprises a third opening and a fourth opening, wherein the third opening overlaps the first opening in a top view, and wherein the fourth opening overlaps the second opening in the top view.

A method of manufacturing a semiconductor package, the method comprising:

• bonding a package component to a first side of an interposer, wherein the interposer comprises a one or more insulating layers and one or more redistribution lines in the one or more insulating layers;
• forming an encapsulant on the interposer, the encapsulant extending along sidewalls of the package component;
• forming one or more metal layers over the package component and the encapsulant;
• forming first pins on the one or more metal layers;
• forming second pins on a first lid;
• bonding the first pins to the second pins by solder;
• and
• etching a first opening and a second opening in the first lid.