Read techniques to reduce read errors in a memory device

A memory device, comprising:

• a memory block that includes a plurality of memory cells arranged in a plurality of word lines, the memory cells being programmed to multiple bits per memory cell, and the memory block including a voltage driver that is located on one side of the word lines;
• control circuitry that is configured to read the memory cells of a selected word line of the plurality of word lines, the control circuitry being configured to:
• separate the memory cells of the selected word line into a first group of memory cells that are located on a side of the word line are near the voltage driver and a second group of memory cells that are located on an opposite side of the word line from the voltage driver, and
• read the memory cells of the first group of memory cells using a first read mode and read the memory cells of the second group using a second read mode that is different than the first read mode to reduce a fail bit count.

An apparatus, comprising:

• a memory block that includes a plurality of memory cells arranged in a plurality of word lines, the memory cells being programmed to multiple bits per memory cell, and the memory block including a voltage driver that is located on one side of the word lines;
• a reading means for reading the memory cells of a selected word line of the plurality of word lines, the reading means being configured to:
• separate the memory cells of the selected word line into a first group of memory cells and a second group of memory cells, the first group of memory cells including half the memory cells of the selected word line that are located on a side of the word line adjacent the voltage driver, and the second group of memory cells include half of the memory cells of the selected word line that are located on an opposite side of the word line from the voltage driver, and
• read the memory cells of the first group of memory cells using a first read mode and read the memory cells of the second group using a second read mode that is different than the first read mode to reduce a fail bit count.