Techniques for determining last programmed wordline

A method of determining a last programmed unit of memory in an array of memory cells comprising:

• programming a set of memory cells within the array of memory cells to create specially programmed memory cells, wherein each specially programmed memory cell within the set of memory cells is programmed along with a programming operation for programming a plurality of wordlines, and wherein each specially programmed cells is created by altering a bitline and gate voltage applied to each memory cell;
• performing a sensing operation across a set of strings in the array of memory cells;
• determining, based on the sensing operation, whether one or more strings failed to conduct during the sensing operation;
• and
• determining a last programmed wordline using the one or more strings that failed to conduct.

A non-transitory computer readable storage medium storing instructions that, when executed by a processor, cause the processor to:

• specially program a set of memory cells within an array of memory cells, wherein each specially programmed memory cell within the set of memory cells is specially programmed during a programming operation for programming a plurality of wordlines, wherein specially programming each memory cell of the set of memory cells enables a last programmed wordline to be determined by a sensing operation;
• perform a sensing operation across a set of strings in the array of memory cells;
• determine, based on the sensing operation, whether one or more strings failed to conduct during the sensing operation;
• and
• determine the last programmed wordline using the one or more strings that failed to conduct.