Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer Film

Abstract

The present invention is a resist underlayer film material, including: (A) a compound or resin having a phenolic hydroxy group; (B) a base generator; and (C) an organic solvent. By the above configuration, the present invention provides: a resist underlayer film material that can form a resist underlayer film having excellent planarizing ability and film formability even on a substrate to be processed having a portion with particular difficulty in planarization, such as a wide trench structure, and that yields a resist underlayer film having an appropriate etching characteristic in a fine patterning process with a multilayer resist method in a semiconductor apparatus manufacturing process; and a patterning process and method for forming a resist underlayer film using the above material.

Dependencies are inferred from the claim text.