Cyclic Film Deposition Using Reductant Gas

A method for depositing a film on a substrate disposed in a processing chamber, the method comprising:

• repeating a cycle comprising
• a precursor step of exposing the substrate to a precursor gas comprising a metal to form an intermediate film comprising the metal at the substrate,
• a precursor purge step of purging the processing chamber after the precursor step,
• a reactant step of exposing the substrate to a reactant gas comprising hydrogen and an additional material to chemically react with the intermediate film to form a deposited film, wherein the deposited film comprises the metal and the additional material, and
• a reactant purge step of purging the processing chamber after the reactant step;
• a reductant step of exposing the substrate to hydrogen gas (H 2) during at least a portion of each cycle;
• and
• maintaining the substrate at a temperature of about 300° C. or less for the duration of each cycle.

A method for depositing a titanium nitride film on a substrate disposed in a processing chamber, the method comprising:

• repeating a cycle comprising
• a precursor step of exposing the substrate to titanium tetrachloride gas (TiCl4) to form an intermediate film comprising titanium and chlorine at the substrate,
• a precursor purge step of purging the processing chamber after the precursor step,
• a reactant step of exposing the substrate to a hydrazine gas (N2H4) to chemically react with the intermediate film to form the titanium nitride film, and
• a reactant purge step of purging the processing chamber after the reactant step;
• a reductant step of exposing the substrate to hydrogen gas (H2) during at least a portion of each cycle;
• and
• maintaining the substrate at a temperature of about 300° C. or less for the duration of each cycle.