Cleaning method and processing apparatus
AssigneeTokyo Electron Limited
InventorsTomoya HASEGAWA, Koji SASAKI
Life of this patent
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Abstract
A cleaning method for removing a deposit in a processing chamber is provided. The cleaning method includes adjusting a temperature in the processing chamber to a first temperature; supplying a first gas including a hydrogen fluoride gas into the processing chamber in which the temperature is adjusted to the first temperature; adjusting the temperature in the processing chamber to a second temperature that is higher than the first temperature; and supplying a second gas including the hydrogen fluoride gas and an ammonia gas into the processing chamber in which the temperature is adjusted to the second temperature.
Claims6
A cleaning method for removing a deposit in a processing chamber, the cleaning method comprising:
- adjusting a temperature in the processing chamber to a first temperature;
- supplying a first gas including a hydrogen fluoride gas into the processing chamber in which the temperature is adjusted to the first temperature;
- adjusting the temperature in the processing chamber to a second temperature that is higher than the first temperature;
- and
- supplying a second gas including the hydrogen fluoride gas and an ammonia gas into the processing chamber in which the temperature is adjusted to the second temperature.
A processing apparatus comprising:
- a processing chamber;
- a gas supply configured to supply a processing gas into the processing chamber;
- a heater configured to heat the processing chamber;
- and
- a controller,
- wherein the controller is configured to control the gas supply and the heater to perform a process including:
- adjusting a temperature in the processing chamber to a first temperature;
- supplying a first gas including a hydrogen fluoride gas into the processing chamber in which the temperature is adjusted to the first temperature;
- raising the temperature in the processing chamber to a second temperature that is higher than the first temperature;
- and
- supplying a second gas including the hydrogen fluoride gas and an ammonia gas into the processing chamber in which the temperature is adjusted to the second temperature.
Dependencies are inferred from the claim text.