Integrated Acoustic Devices
AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsVikrant J. GOKHALE, Brian P. DOWNEY, Shawn C. MACK, D. Scott KATZER, David J. MEYER, Pallavi DHAGAT, Albrecht JANDER
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Abstract
Method for forming an integrated acoustic device. A thin film piezoelectric acoustic transducer is epitaxially formed on a host substrate and is then transferred to a functional target substrate wherein physical phenomena from the piezoelectric transducer and the arbitrary functional substrate interact to form a hybrid acoustic microsystem comprising the piezoelectric transducer and the arbitrary functional substrate.
Claims14
A method for fabricating an integrated acoustic device on an arbitrary functional substrate, comprising:
- epitaxially growing a sacrificial layer on a host substrate;
- epitaxially growing a piezoelectric transducer on the sacrificial layer;
- forming at least one top metal electrode on a top surface of the piezoelectric transducer;
- etching the sacrificial layer to release the piezoelectric transducer and removing the piezoelectric transducer from the host substrate while maintaining its epitaxial nature and materials properties;
- and
- transferring the released piezoelectric transducer to the arbitrary functional substrate;
- wherein the physical phenomena from the piezoelectric transducer and the arbitrary functional substrate interact to form a hybrid acoustic microsystem comprising the piezoelectric transducer and the arbitrary functional substrate;
- wherein the arbitrary functional substrate provides critical functionality to the acoustic microsystem.
Dependencies are inferred from the claim text.