Method and a system for combined characterisation of structures etched in a substrate

Abstract

A method for characterising structures etched in a substrate, such as a wafer is disclosed. The method includes at least one structure etched in the substrate, at least one imaging step including the following steps: capturing, with an imaging device positioned on a top side of said substrate, at least one image of a top surface of the substrate, and measuring a first data relating to the structure from at least one captured image, at least one interferometric measurement step, carried out with a low-coherence interferometer positioned on the top side, for measuring with a measurement beam positioned on the structure, at least one depth data relating to a depth of said structure; wherein the method also comprises a first adjusting step for adjusting said measurement beam according to the first data. A system implementing such a method is also disclosed.

Dependencies are inferred from the claim text.