Semiconductor device

A semiconductor device comprising:

• a first interlayer insulating film;
• a second interlayer insulating film;
• a first wiring;
• a second wiring;
• and
• a resistor film,
• wherein the first wiring is disposed on the first interlayer insulating film,
• wherein the second interlayer insulating film includes a first layer and a second layer,
• wherein the first layer is disposed on the first interlayer insulating film so as to cover the first wiring,
• wherein the resistor film is disposed on the first layer,
• wherein the resistor film contains at least one selected from the group consisting of silicon chromium, silicon chromium into which carbon is introduced, nickel chromium, titanium nitride and tantalum nitride,
• wherein the second layer is disposed on the first layer so as to cover the resistor film,
• wherein the second wiring is disposed on the second layer, and
• wherein the resistor film is closer to the first wiring than to the second wiring in a thickness direction of the second interlayer insulating film.