SiC MULTILAYER BODY, PRODUCTION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
AssigneeCusic Inc.
InventorHiroyuki NAGASAWA
Life of this patent
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Abstract
According to one embodiment, a method of producing a SiC laminate having a hexagonal SiC layer and a 3C-SiC layer comprises: forming a seed plane parallel to a close-packed plane of the crystal lattice on the surface of the hexagonal SiC layer; providing an inclined plane, which is inclined with respect to the seed plane, to all faces adjacent to the seed plane; forming a two-dimensional nucleus of 3C-SiC on the seed plane; and epitaxially growing both the two-dimensional nucleus of 3C-SiC and the SiC layers exposed on the inclined plane simultaneously in a direction parallel to the close-packed plane of the crystal lattice.
Claims10
A SiC laminate, comprising:
- a single crystal hexagonal SiC layer (1);
- and
- a single crystal 3C-SiC layer (2) overlaid on the hexagonal SiC layer (1), wherein
- the 3C-SiC layer (2) does not contain a twin boundary,
- a heterointerface where the 3C-SiC layer (2) and the hexagonal SiC layer (1) meet is exactly parallel to close-packed planes (CPPs) of crystal lattices of the layers and is a lattice-matched coherent heterointerface (3),
- all coherent heterointerfaces (3) are exposed on a main surface (S) at an inclination angle (θ) of 0.5 degrees or more and less than 73 degrees, and a segment (3S) of the coherent heterointerface (3) on the main surface (S) is a polygon or
- a straight line with no endpoint and separates a hexagonal SiC surface (1S) and a 3C-SiC surface (2S).
Dependencies are inferred from the claim text.