Photoelectric conversion element and imaging device

An imaging device comprising multiple pixels each provided with one or multiple photoelectric conversion elements,

• the photoelectric conversion element including
• a first electrode,
• a second electrode disposed to be opposed to the first electrode, and
• an organic photoelectric conversion layer provided between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material, the second organic semiconductor material having a Highest Occupied Molecular Orbital (HOMO) level which is deeper than a Lowest Unoccupied Molecular Orbital (LUMO) level of the first organic semiconductor material and has a difference of 1.0 eV or more and 2.0 eV or less from the LUMO level of the first organic semiconductor material, the third organic semiconductor material having a crystalline property and having a linear absorption coefficient of 10000 cm−1 or less in a visible light region and an optical absorption edge wavelength of 550 nm or less.