Memory and manufacturing method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorChihCheng LIU
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Abstract
The present disclosure discloses a memory and a manufacturing method thereof. The memory includes: active regions extending in a first direction and word lines extending in a second direction, wherein each of the word lines is partially located between adjacent active regions; the word line includes a gate conductive layer; and, in a direction parallel to the first direction, each of the active regions has an end face facing the word lines, and an extreme difference in distances between the end face and the gate conductive layer is within a preset range.
Claims20
A memory, comprising:
- a plurality of active regions extending along a first direction and an isolation structure between the active regions;
- and
- a plurality of word lines extending along a second direction, the first direction is not perpendicular to the second direction;
- wherein the word line comprises a gate conductive layer;
- wherein the gate conductive layer comprises a straight portion located in the active region and a bent portion located in the isolation structure.
A method for manufacturing a memory, comprising:
- providing an active regions extending along a first direction and a recess extending along a second direction, and an isolation structure is arranged between the adjacent active regions, and the recess is located in the active region and the isolation structure;
- a word line is formed in the recess, and the word line comprises a gate dielectric layer and a gate conductive layer;
- wherein the gate conductive layer comprises a straight portion located in the active region and a bent portion located in the isolation structure.
Dependencies are inferred from the claim text.