Transistor having wrap-around source/drain contacts

A set of semiconductor devices comprising:

• a channel region over a first region and a second region of a substrate;
• a bottom conductive layer over a third region of the substrate and operable to form a bottommost component of a multi-component wrap-around source or drain (S/D) contact;
• wherein the first region of the substrate, the second region of the substrate, and the third region of the substrate do not overlap;
• and
• a shared S/D region over the bottom conductive layer and adjacent to the channel region;
• wherein the channel region comprises a first channel stack over the first region of the substrate and a second channel stack over the second region of the substrate;
• wherein the first channel stack comprises a first set of stacked and spaced-apart channel nanosheets;
• wherein the second channel stack comprises a second set of stacked and spaced-apart channel nanosheets;
• wherein the shared S/D region is shared by the first channel stack and the second channel stack;
• wherein a non-uniform height of the bottom conductive layer tapers downward for portions of the bottom conductive layer that are closest to the first channel stack;
• wherein the non-uniform height of the bottom conductive layer tapers downward for portions of the bottom conductive layer that are closest to the second channel stack;
• and
• wherein the shared S/D region is not a component of the multi-component S/D contact.