Field-effect transistor with hybrid switching mechanism

A method for forming an integrated circuit (IC) device, the method comprising:

• providing a channel region, the channel region comprising a semiconductor material;
• providing a first region at a first section of the channel region, the first region comprising a first semiconductor material with dopants of a first type;
• providing a second region at a second section of the channel region, the second region comprising a second semiconductor material with dopants of the first type;
• providing a third region at a third section of the channel region, the third region comprising a fourth semiconductor material with dopants of a second type, wherein the second type is different from the first type;
• providing a first gate over a fourth section of the channel region, the first gate comprising a first gate electrode;
• and
• providing a second gate over a fifth section of the channel region, the second gate comprising a second gate electrode,
• wherein the fourth section is between the first section and the second section, and the fifth section is between the first section and the third section.

An integrated circuit (IC) device, comprising:

• a substrate;
• a first transistor arrangement, comprising:
• a first region, comprising a first semiconductor material with dopants of a first type,
• a second region, comprising a second semiconductor material with dopants of the first type, and
• a channel region, the channel region crossing the substrate;
• and
• a second transistor arrangement, comprising:
• the first region,
• the channel region, and
• a third region, comprising a third semiconductor material with dopants of a second type, wherein the second type is different from the first type,
• wherein the first region, the second region, and the third region are connected to the channel region.