Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsKook-tae KIM, Jin-gyun KIM, Soo-jin HONG
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Abstract
An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.
Claims20
An image sensor, comprising:
- a semiconductor substrate having a first surface and a second surface opposing the first surface;
- and
- a pixel isolation film in a pixel trench penetrating through the semiconductor substrate, the pixel isolation film defining active pixels in the semiconductor substrate,
- wherein:
- the pixel isolation film includes:
- an insulating liner on an inner wall of the pixel trench;
- a buried layer on the insulating liner and filling a portion of the pixel trench;
- and
- a buried insulating layer in a remaining portion of the pixel trench, and
- a portion of the insulating liner is between a sidewall of the buried insulating layer and the inner wall of the pixel trench.
An image sensor, comprising:
- a semiconductor substrate having a first surface and a second surface opposing the first surface;
- and
- a pixel isolation film in a pixel trench, the pixel trench penetrating through the semiconductor substrate and defining active pixels in the semiconductor substrate,
- wherein:
- the pixel isolation film includes:
- an insulating liner on an inner wall of the pixel trench;
- a buried layer on the insulating liner and filling a portion of the pixel trench;
- and
- a buried insulating layer in a remaining portion of the pixel trench,
- a portion of the insulating liner is between a sidewall of the buried insulating layer and the inner wall of the pixel trench such that the buried insulating layer is not in contact with the semiconductor substrate, and
- the buried insulating layer vertically overlaps the buried layer.
Dependencies are inferred from the claim text.