Pj junction device structure in semiconductor device with back side power delivery network (bspdn) structure
AssigneeSamsung Electronics Co., Ltd.
InventorsByounghak HONG, Sooyoung PARK, Kang-ill SEO
Life of this patent
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Abstract
Provided is a semiconductor device that includes: at least one field-effect transistor and at least one PN junction device at a lateral side of the at least one field-effect transistor in a 1st layer; and at least one back side power delivery network (BSPDN) structure in a 2nd layer below the 1st layer, wherein the at least one BSPDN structure is configured to connect the at least one field-effect transistor to a voltage source.
Claims20
A semiconductor device comprising:
- at least one field-effect transistor and at least one PN junction device at a lateral side of the at least one field-effect transistor in a 1st layer;
- and
- at least one back side power delivery network (BSPDN) structure in a 2nd layer below the 1st layer,
- wherein the at least one BSPDN structure is configured to connect the at least one field-effect transistor to a voltage source.
A semiconductor device comprising:
- at least one field-effect transistor in a 1st layer;
- and
- at least one back side power delivery network (BSPDN) structure and at least one PN junction device at a lateral side of the at least one BSPDN structure in a 2nd layer below the 1st layer,
- wherein the at least one BSPDN structure is configured to connect the at least one field-effect transistor to a voltage source.
A method of manufacturing a semiconductor device, the method comprising:
- providing at least one field-effect transistor in a 1st layer above a substrate in a 2nd layer;
- forming at least one PN junction device at a lateral side of the at least one field-effect transistor in the 1st layer;
- and
- forming at least one back side power delivery network (BSPDN) structure in the 2nd layer, the at least one BSPDN structure being connected to the at least one field-effect transistor.
A method of manufacturing a semiconductor device, the method comprising:
- providing at least one field-effect transistor in a 1st layer above a substrate in a 2nd layer;
- forming at least one PN junction device in the substrate in the 2nd layer;
- and
- forming at least one back side power delivery network (BSPDN) structure at a later side of the at least one PN junction device in the 2nd layer, the at least one BSPDN structure being connected to the at least one field-effect transistor.
Dependencies are inferred from the claim text.