US 2023/0275017 A1 · SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Abstract

A semiconductor structure and a method for forming the same are provided. A semiconductor structure includes a substrate, a bit line structure, a first conductive pillar, an interface layer, a second conductive pillar, and an intermediate structure. The substrate has an active area and an isolation structure. The bit line structure is disposed on the active area. The first conductive pillar is disposed on the active area. The interface layer is disposed on a top surface of the first conductive pillar. The second conductive pillar is disposed on the interface layer. The intermediate structure is disposed between the first conductive pillar and the bit line structure.

Claims20

Dependent claims

A semiconductor structure, comprising:

a substrate having an active area and an isolation structure;
a bit line structure disposed on the active area;
a first conductive pillar disposed on the active area;
an interface layer disposed on a top surface of the first conductive pillar;
a second conductive pillar disposed on the interface layer:
and
an intermediate structure disposed between the first conductive pillar and the bit line structure.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/590,293Filed 1 Feb 2022

Published

31 Aug 2023

Term ends

Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10W 20/42
Characterised by their conductive parts: vias, e.g. via plugs
H10B 12/482
Data lines or contacts therefor: bit lines
H10W 20/056
Of conductive parts of the interconnections: by filling conductive material into holes, grooves or trenches
H10W 20/069
Of conductive parts of the interconnections: by forming self-aligned vias or self-aligned contact plugs

Semiconductor structure and method for forming the same

Life of this patent

Semiconductor structure and method for forming the same

Life of this patent

Abstract

Claims20