Plasma diced wafers and methods thereof

A method of forming devices comprising:

• providing a processed wafer comprising a plurality of dies formed thereon, wherein the processed wafer comprises
• a wafer with active and inactive major wafer surfaces, wherein the active wafer includes circuit components of the devices,
• a BEOL dielectric disposed on the active major wafer surface with the circuit components, the BEOL dielectric includes interconnects interconnecting the circuit components,
• a passivation layer disposed on a top surface of the BEOL dielectric, and
• dicing channels separating the plurality dies in the x and y directions;
• attaching a die attach film (DAF) on the inactive surface of the wafer;
• and
• stealth dicing the wafer to form a modified layer with cracks in a bottom portion of the wafer in the dicing channels;
• patterning the passivation layer to form a patterned passivation layer, the patterned passivation layer exposes the dicing channels of the processed wafer;
• plasma dicing partially the processed wafer using the patterned passivation layer as a plasma dicing mask, wherein the plasma dicing removes exposed dicing channels of the processed wafer until it reaches a lower portion of the wafer, leaving the lower portion of the wafer and die attach film remaining;
• and
• performing a singulation process using lateral force to break the lower portion of the wafer and die attach film to singulate the processed wafer into individual devices, wherein the modified layer facilitates in singulating the processed wafer.