Miniature ion traps for fast, high-fidelity and scalable quantum computations

Abstract

A vertical ion trap include at least four RF electrodes on a substrate, the RF electrodes extending up from the substrate, a region between the electrodes forming the vertical ion trap, and at least two direct current electrodes adjacent the RF electrodes and the vertical ion trap. A horizontal ion traps includes a substrate, the substrate having a hole, at least one RF electrodes raised above the substrate and offset from each other across the hole, the RF electrodes, and at least one DC electrode corresponding to each RF electrode, the DC electrodes raised above the substrate. A method of forming an ion trap includes forming three-dimensional structures on a substrate in a curable polymer using two-photon polymerization direct laser writing, metalizing the three-dimensional structures to form RF electrodes, and forming direct current electrodes at least partially on the substrate.

Dependencies are inferred from the claim text.