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US 2023/0273369 A1Published application
Photonics structures having a locally-thickened dielectric layer
AssigneeGlobalFoundries U.S. Inc.
InventorsShesh Mani Pandey, Yusheng Bian, Steven M. Shank, Judson Holt
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Abstract
Photonics structures including an optical component and methods of fabricating a photonics structure including an optical component. The photonics structure includes an optical component, a substrate having a cavity and a dielectric material in the cavity, and a dielectric layer positioned in a vertical direction between the optical component and the cavity. The optical component is positioned in a lateral direction to overlap with the cavity in the substrate.
Claims21
A photonics structure comprising:
- an optical component;
- a substrate including a cavity and a first dielectric material in the cavity;
- a first dielectric layer including a first portion positioned in a vertical direction between the optical component and the cavity, the first dielectric layer having a thickness in a range of about 5 nanometers to about 40 nanometers;
- a semiconductor layer on a second portion of the first dielectric layer, the semiconductor layer having a thickness in a range of about 4 nanometers to about 200 nanometers;
- and
- an electronic component separated from the substrate by the second portion of the first dielectric layer,
- wherein the optical component is positioned in a lateral direction to overlap with the cavity in the substrate.
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10-11. (canceled)
A method of forming a photonics structure, the method comprising:
- forming an optical component;
- forming a cavity in a substrate;
- and
- forming a first dielectric material inside the cavity,
- wherein a first dielectric layer includes a first portion that is positioned in a vertical direction between the optical component and the cavity, an electronic component is separated from the substrate by a second portion of the first dielectric layer, the first dielectric layer has a thickness in a range of about 5 nanometers to about 40 nanometers, a semiconductor layer is positioned on the second portion of the first dielectric layer, the semiconductor layer has a thickness in a range of about 4 nanometers to about 200 nanometers, and the optical component is positioned in a lateral direction to overlap with the cavity in the substrate.
2 more elements
Dependencies are inferred from the claim text.