Method of inspecting semiconductor device

A method of inspecting a semiconductor device, the method comprising:

• dividing an inspection region of a semiconductor device into a plurality of inspection targets including a plurality of first targets and a plurality of second targets;
• and irradiating a charging electron beam to the plurality of first targets, without irradiating the charging electron beam to the plurality of second targets, by using a scanning electron microscope (SEM),
• wherein the plurality of first targets are arranged in a plurality of first columns spaced apart from each other in a second direction, each first column of the plurality of first columns extending in a first direction, different from the second direction, and including at least two first targets spaced apart from each other in the first direction,
• wherein the plurality of second targets are arranged in a plurality of second columns spaced apart from each other in the second direction, each second column of the plurality of second columns extending in the first direction and including at least two second targets spaced apart from each other in the first direction, and wherein each first column of the plurality of first column and each second column of the plurality of second columns are alternately arranged in the second direction.

A method of inspecting a semiconductor device, the method comprising:

• irradiating a first electron beam to an inspection region of a semiconductor device;
• irradiating a second electron beam to the inspection region;
• detecting secondary electrons emitted from the inspection region by the second electron beam;
• and
• analyzing the inspection region using information on the detected secondary electrons, wherein the inspection region comprises a plurality of inspection targets including a conductive material, and
• wherein in the irradiating of the first electron beam to the inspection region includes:
• irradiating the first electron beam to some inspection targets of the plurality of inspection targets, without irradiating the other inspection targets of the plurality of inspection targets.