Rinsing solution, method of treating substrate, and method of manufacturing semiconductor device

Abstract

A rinsing solution for rinsing a substrate with a protrusion portion, including an organic solvent (S1) that contains no hydroxyl group or fluorine atom and that has a dynamic viscosity of equal to or smaller than 1.05×106 m2/s. A method of treating a substrate with a protrusion portion, including a step (A) of bringing the rinsing solution into contact with a surface of the substrate with the protrusion portion, the protrusion portion being formed on the surface; and a step (B) of removing the rinsing solution from the surface on which the protrusion portion is formed.

Dependencies are inferred from the claim text.