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US 2023/0231016 A1Published application
Quantum device
AssigneeTeikyo University
InventorTetsufumi Tanamoto
Life of this patent
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Abstract
A quantum device includes a transistor structure section having a source, a drain, and a gate, one or more quantum dot structure sections in which a charge is localizable, and a quantum bit control current line configured to change a state of the charge in the quantum dot structure section.
Claims11
A quantum device comprising:
- a transistor structure section having a source, a drain, and a gate;
- one or more quantum dot structure sections in which a charge is localizable;
- and
- a quantum bit control current line configured to change a state of the charge in the quantum dot structure section,
- wherein a length of the gate is 30 nm or less.
2 more elements
A quantum device comprising:
- a transistor structure section having a source, a drain, and a gate and having a plurality of channel structure parts between the source and the drain;
- and
- one or more quantum dot structure sections,
- wherein:
- the quantum dot structure section is sandwiched between the plurality of channel structure parts,
- an electron or a hole is storable in the quantum dot structure section, and
- the quantum device further includes a quantum bit control current line through which a quantum bit control current flows, which generates a magnetic field that controls a spin state of the electron or the hole.
4 more elements
Dependencies are inferred from the claim text.