Back to results
US 2023/0194911 A1Published application
Heterogeneous integration and electro-optic modulation of iii-nitride photonics on a silicon photonic platform
AssigneeRaytheon BBN Technologies Corp.
InventorsMoe Soltani, Thomas Kazior
Life of this patent
Estimating the term…
Abstract
A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.
Claims6
A method of forming a photonic integrated circuit, the method comprising:
- forming a silicon nitride waveguide on a first substrate;
- forming an electro-optic modulator including a III-nitride waveguide structure on a second substrate;
- bonding the electro-optic modulator to the silicon nitride waveguide;
- and
- removing the second substrate.
2 more elements
Dependencies are inferred from the claim text.