Automated feedforward and feedback sequence for patterning cd control

A method comprising:

• performing a series of process steps on a wafer to obtain a plurality of features, wherein a process step is performed under a process condition;
• measuring a dimension of the plurality of features after performing the series of process steps;
• determining a difference between the dimension that is measured and a target dimension for the plurality of features;
• modifying the process condition for the process step based on the difference and a sensitivity factor for the plurality of features relating change in dimension and change in process condition.

A method, comprising:

• measuring an incoming ADI dimension of a mandrel on a wafer;
• determining a difference between an incoming ADI dimension and a desired ADI dimension of the mandrel;
• modifying a time for performing an etch process step based on the difference and an etch rate of the etch process step to achieve a desired ADT dimension of a core feature based on the incoming ADI dimension, the core feature being formed when performing a first patterning process of a self-aligned double patterning (SADP) process;
• receiving a change in a second patterning process of the SADP process;
• and
• determining a modified ASD dimension for an oxide layer over the core feature based on the change in the second patterning process;
• and
• determining a number of deposition cycles when performing an atomic layer deposition (ALD) process to achieve the modified ASD dimension based on a deposition rate of the ALD process and the desired ADT dimension of the core feature.